Datasheet > TBL090N04T-S8

TBL090N04T-S8

更新时间： 2024-09-30 18:09:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	505K
描述
40V, N Channel MOSFETs

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中文翻译

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数据手册

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TBL090N04T-S8 数据手册

N-Channel Enhancement Mode MOSFET

TBL090N04T-S8

Features



Advanced Shielded-Gate Trench technology

Low on-resistance

Fast switching speed

Low thermal resistance

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOP-8

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

TBL090N04T-S8

4000 pcs / Tape & Reel

090N04T

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 70°C) ^*1

Pulsed Drain Current (t_p=10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

I_D

I_DM

E_AS

P_D

°C

2.1

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1565A: March 2024 [2.2]

www.gmesemi.com

12 3 4 5

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