Datasheet > TBL085N06T-5DL8

TBL085N06T-5DL8

更新时间： 2024-04-09 19:00:13

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	614K
描述
60V, N Channel MOSFETs

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TBL085N06T-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL085N06T-5DL8

Features



Advanced Shielded-Gate Trench technology

Super low on-resistance

Fast switching speed

Excellent c_dV/ d_teffect decline

HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

TBL085N06T-5DL8

5000 pcs / Tape & Reel

085N06T

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

160

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

R_θJC

1.8

°C /W

MTM0720A: September 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

下载PDF

与TBL085N06T-5DL8相关器件

型号	品牌	描述	获取价格	数据表
TBL085N06TD	Galaxy Microelectronics	60V, N Channel MOSFETs	获取价格
TBL085N08TH-5DL8	Galaxy Microelectronics	72A, 85V, 69W, N Channel, Power MOSFETs	获取价格
TBL085N08THD	Galaxy Microelectronics	65A, 85V, 69W, N Channel, Power MOSFETs	获取价格
TBL085P03-3DL8	Galaxy Microelectronics	49A, -30V,31W, P Channel, Power MOSFETs	获取价格
TBL085P03D	Galaxy Microelectronics	62A, 30V, 50W, P Channel, Power MOSFETs	获取价格
TBL085P03-S8	Galaxy Microelectronics	-30V, P Channel MOSFETs	获取价格