Datasheet > TBL085N03-3DL8

TBL085N03-3DL8

更新时间： 2024-04-09 19:03:20

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	491K
描述
30A, 30V, 18W, N Channel, Power MOSFETs

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数据手册

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TBL085N03-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL085N03-3DL8

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8L

PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

TBL085N03-3DL8

5000 pcs / Tape & Reel

085N03

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Pulsed Drain Current ^*2

I_D

I_DM

120

57.8

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

R_θJL

T_J

150

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1(bottom)

Thermal Resistance Junction-to-Case ^*1(top)

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0989A: October 2021

www.gmesemi.com

12 3 4 5

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