Datasheet > TBL080N10TD

TBL080N10TD

更新时间： 2024-04-09 19:01:50

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	683K
描述
100V, N Channel MOSFETs

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中文翻译

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数据手册

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TBL080N10TD 数据手册

N-Channel Enhancement Mode MOSFET

TBL080N10TD

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

JESD22-A114-B ESD rating of class 1B per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

TBL080N10TD

80 pcs / Tube & 2500 pcs / Tape & Reel

080N10TD

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

100

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 100°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

360

°C

104

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.83

1.2

°C /W

MTM1359A: June 2023 [2.1]

www.gmesemi.com

12 3 4 5

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