Datasheet > TBL080N06HB

TBL080N06HB

更新时间： 2024-04-09 19:01:38

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	671K
描述
80A, 60V, 112W, N Channel, Power MOSFETs

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数据手册

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TBL080N06HB 数据手册

N-Channel Enhancement Mode MOSFET

TBL080N06HB

Features



Super low gate charge

Green device available

Excellent C_dV/ d_teffect decline

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263

TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

TBL080N06HB

50 pcs / Tube & 800 pcs / Tape & Reel

080N06HB

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

I_DM

E_AS

P_D

320

280

°C

112

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.02

1.33

°C /W

MTM0962A: May 2023 [2.1]

www.gmesemi.com

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