Datasheet > TBL055N085TH

TBL055N085TH

更新时间： 2024-04-09 18:59:08

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	652K
描述
120A, 85V, 174W, N Channel, Power MOSFETs

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TBL055N085TH 数据手册

N-Channel Enhancement Mode MOSFET

TBL055N085TH

Features



Extremely low on-resistance R_DS(ON

)

Excellent Q_G* R_DS(ON) product(FOM)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Applications



Motor control and drive

Battery management

UPS

Mechanical Da ta



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,

Method 208

TO-220AB

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL055N085TH

TO-220AB

50 pcs / Tube

055N085TH

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

138

120

I_D

Pulsed Drain Current (T_C= 25°C, t_plimited by T_J(MAX)

)

I_DM

480

144

Avalanche Energy, Single Pulse (L=0.5mH, R_G=25Ω)

E_AS

MTM0941A: November 2020

www.gmesemi.com

12 3 4 5

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