Datasheet > TBL050N04D

TBL050N04D

更新时间： 2024-04-09 19:00:48

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	571K
描述
40V, N Channel MOSFETs

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中文翻译

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数据手册

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TBL050N04D 数据手册

N-Channel Enhancement Mode MOSFET

TBL050N04D

Features



Super low gate charge

100% E_ASguaranteed

Excellent C_dV/d_teffect decline

Advanced high cell density technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL050N04D

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

050N04D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

±20

100

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

E_AS

400

230

Single Pulse Avalanche Energy ^*3

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*1

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

P_D

R_θJC

T_J

2.1

°C /W

-55 ~ +150

°C

T_STG

MTM0531A: October 2021

www.gmesemi.com

12 3 4 5

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