Datasheet > TBL04N06R

TBL04N06R

更新时间： 2024-04-09 18:59:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	494K
描述
4A, 60V, 3.1W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL04N06R 数据手册

N-Channel Enhancement MOSFET

TBL04N06R

Features



Low on resistance

Low on threshold voltage

Fast switching speed

Low gate drive

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Motor control

Power switches

DC-DC converters

Power management functions

Mechanical Data



Case: SOT-223

SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL04N06R

SOT-223

4000 pcs / Tape & Reel

04N06

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

Unit

Gate-to-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

I_DM

Power Dissipation ^{(Note 1)}

P_D

3.1

Thermal Characteristics

Parameter

Thermal Resistance Junction-to-Air ^{(Note 1)}

Operating Junction Temperature Range

Storage Temperature Range

Symbol

R_θJA

Value

40.3

Unit

°C/W

°C

T_J

-55 ~ +150

T_STG

°C

MTM0446A: December 2019

www.gmesemi.com

12 3 4 5

中文翻译

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