Datasheet > TBL045N10THB

TBL045N10THB

更新时间： 2024-04-09 18:59:50

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	666K
描述
110A, 100V, 178W, N Channel, Power MOSFETs

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数据手册

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TBL045N10THB 数据手册

N-Channel Enhancement Mode MOSFET

TBL045N10THB

Key performance parameters

Features



N-channel, normal level

Parameter

V_DS

Value

100

4.5

Unit

Excellent FOM

Very low on-resistance R_DS(on)

Ideal for high-frequency switching and synchronous

rectification

R_DS(on)，max@10V

Q_{g. typ}@10V

mΩ

105



Pb-free lead plating; RoHS compliant

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263



Molding Compound: UL Flammability Classification Rating

TO-263

94V-0



Terminals: Matte tin-plated leads; solderability-per MIL-STD-

202, Method 208

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

50 pcs / Tube & 800 pcs / Tape & Reel

Marking Code

TBL045N10THB

045N10THB

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_DSS

V_GSS

100

±20

110

Continuous Drain Current (T_C= 25°C, Silicon limited) ^*1

Continuous Drain Current (T_C= 100°C, Silicon limited)

Pulsed Drain Current (t_p= 10μs)^*1

I_D

I_DM

645

560

Single Pulse Avalanche Energy ^*4

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

178

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

°C /W

1.2

-55 ~ +150

°C

T_STG

MTM0646A: September 2022

www.gmesemi.com

12 3 4 5

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