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TBL042N10THB PDF预览

TBL042N10THB

更新时间: 2024-04-09 18:59:38
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 723K
描述
186A, 100V, 250W, N Channel, Power MOSFETs

TBL042N10THB 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL042N10THB  
Features  
Super low gate charge  
Green device available  
Excellent cdV / dt effect decline  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: TO-263  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202,  
Method 208  
TO-263  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
TBL042N10THB  
TO-263  
50 pcs / Tube & 800 pcs / Tape & Reel  
042N10THB  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
100  
Unit  
V
Gate-to-Source Voltage  
±20  
V
Continuous Drain Current (TC = 25°C, VGS =10V) *1  
Pulsed Drain Current *2  
186  
A
IDM  
440  
A
Single Pulse Avalanche Energy *3  
EAS  
665  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
PD  
Value  
250  
Unit  
W
Power Dissipation (TC = 25°C)  
Thermal Resistance Junction-to-Air (steady state)  
Thermal Resistance Junction-to-Case  
Operating Junction Temperature Range  
Storage Temperature Range  
RθJA  
RθJC  
TJ  
62  
°C /W  
°C /W  
°C  
0.5  
-55 to +150  
-55 to +150  
TSTG  
°C  
MMTM0910A: February 2021  
www.gmesemi.com  
1

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