Datasheet > TBL03N10R

TBL03N10R

更新时间： 2024-04-09 18:59:53

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	755K
描述
3A,100V, 3.1W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL03N10R 数据手册

N-Channel Enhancement Mode MOSFET

TBL03N10R

Features



Electrostatic sensitive devices

Excellent package for good heat dissipation

Halogen free

Qualified to AEC-Q101 standards for high reliability

APPLICATIONS



Power switching application

Hard switching and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOT-223

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

TBL03N10R

4000 pcs / Tape & Reel

03N10

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C )

Continuous Drain Current (T_A= 70°C )

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

I_D

1.8

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C )

P_D

R_θJA

T_J

3.1

40.3

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0689A: November 2022 [2.2]

www.gmesemi.com

12 3 4 5

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