Datasheet > TBL03N10E

TBL03N10E

更新时间： 2024-04-09 19:01:25

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	509K
描述
3A,100V, 1.5W, N Channel, Power MOSFETs

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数据手册

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TBL03N10E 数据手册

N-Channel Enhancement Mode MOSFET

TBL03N10E

Features



Electrostatic sensitive devices

Excellent package for good heat dissipation

Halogen free

Qualified to AEC-Q101 standards for high reliability

APPLICATIONS



Power switching application

Hard switching and high frequency circuits

Uninterruptible power supply

Mechanical Data



Case: SOT-89

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

TBL03N10E

1000 pcs / Tape & Reel

03N10

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current ^*2

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

R_θJL

R_θJC

T_J

1.5

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Lead ^*1

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0999A: March 2020 [2.0]

www.gmesemi.com

12 3 4 5

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