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TBL03N10-3L PDF预览

TBL03N10-3L

更新时间: 2024-04-09 19:00:19
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 731K
描述
3A,100V, 0.35W, N Channel, Power MOSFETs

TBL03N10-3L 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL03N10-3L  
Features  
Electrostatic sensitive devices  
Excellent package for good heat dissipation  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
APPLICATIONS  
Power switching application  
Hard switching and high frequency circuits  
Uninterruptible power supply  
Mechanical Data  
Case: SOT-23-3L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
SOT-23-3L  
Ordering Information  
Part Number  
Package  
SOT-23-3L  
Shipping Quantity  
Marking Code  
TBL03N10-3L  
3000 pcs / Tape & Reel  
03N10  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
ID  
100  
±20  
3
V
V
A
A
A
A
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TA = 25°C)  
Continuous Drain Current (TA = 70°C)  
Pulsed Drain Current (tp = 10μs, TA = 25°C )  
ID  
1.4  
1.1  
12  
ID  
IDM  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TA = 25°C)  
PD  
RθJA  
RθJC  
TJ  
0.9  
140  
W
°C /W  
°C /W  
°C  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Operating Junction Temperature Range  
Storage Temperature Range  
50  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0793A: February 2023 [2.1]  
www.gmesemi.com  
1

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