Datasheet > TBL038N08TH-5DL8

TBL038N08TH-5DL8

更新时间： 2024-04-09 19:01:09

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	629K
描述
120A, 80V, 114W, N Channel, Power MOSFETs

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数据手册

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TBL038N08TH-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL038N08TH-5DL8

Features



High speed power switching, Logic level

Ehanced Avalanche Ruggedness

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

038N08TH

TBL038N08TH-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C ，Sillicon Limited)

Continuous Drain Current (T_C= 25°C ，Package Limited)

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p=10us，T_C= 25°C )

Single Pulse Avalanche Energy ^*3

120

I_D

100

I_DM

E_AS

P_D

400

°C

Power Dissipation (T_C= 25°C)

114

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.1

°C /W

MTM1166A: April 2023 [1.0]

www.gmesemi.com

12 3 4 5

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