Datasheet > TBL038N06THD

TBL038N06THD

更新时间： 2024-04-09 19:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	681K
描述
148A, 60V, 150W, N Channel, Power MOSFETs

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TBL038N06THD 数据手册

N-Channel Enhancement Mode MOSFET

TBL038N06THD

Features



Super low gate charge

100% E_ASguaranteed

Excellent CdV/dt effect decline

Advanced high cell density Trench technology

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data

TO-252



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202,

Method 208

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

038N06THD

TBL038N06THD

80 pcs / Tube & 2500 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

148

100

Continuous Drain Current (T_C= 25°C, Silicon Limited)

Continuous Drain Current (T_C= 25°C, Package Limited)

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

I_D

I_DM

400

140

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C )

Symbol

P_D

Value

150

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.83

-55 ~ +150

T_STG

°C

MTM0853A: February 2023 [2.1]

www.gmesemi.com

12 3 4 5

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