Datasheet > TBL038N06TH-5DL8

TBL038N06TH-5DL8

更新时间： 2024-04-09 18:59:48

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	1248K
描述
135A, 60V, 125W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL038N06TH-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL038N06TH-5DL8

Features



Super low gate charge

100% E_ASguaranteed

Excellent CdV/dt effect decline

Advanced high cell density Trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

038N06TH

TBL038N06TH-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

135

100

Continuous Drain Current (T_C= 25°C , V_GS= 10V) ^{*1 *4}silicon limited

Continuous Drain Current (T_C= 25°C , V_GS= 10V) ^{*1 *4}package limited

Continuous Drain Current (T_C= 100°C , V_GS= 10V) ^{*1 *4}

Pulsed Drain Current ^*4

I_D

I_DM

400

140

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Symbol

P_D

Value

125

Unit

Thermal Resistance Junction-to-Air ^*1

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

（bottom）

-55 ~ +150

T_STG

°C

MTM0741A: September 2022 [2.1]

www.gmesemi.com

12 3 4 5

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