Datasheet > TBL038N06HB

TBL038N06HB

更新时间： 2024-04-09 19:01:12

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	735K
描述
120A, 60V, 176W, N Channel, Power MOSFETs

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数据手册

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TBL038N06HB 数据手册

N-Channel Enhancement Mode MOSFET

TBL038N06HB

Features



Fully characterized avalanche voltage and current

Extremely low on-resistance R_DS(ON)

Excellent package for good heat dissipation

JESD22-A114-B ESD rating of class 2 per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Da ta



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL038N06HB

TO-263

50 pcs / Tube & 800 pcs / Tape & Reel

038N06HB

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

147

120

104

480

335

Continuous Drain Current (T_C= 25°C, Silicon Limited)

Continuous Drain Current (T_C= 25°C, Package Limited)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*4

I_D

I_DM

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Symbol

P_D

Value

176

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.85

-55 to +175

T_STG

°C

MTM0669A: December 2022 [2.0]

www.gmesemi.com

12 3 4 5

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