Datasheet > TBL036N06D

TBL036N06D

更新时间： 2024-04-09 19:01:41

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	665K
描述
110A, 60V, 83W, N Channel, Power MOSFETs

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数据手册

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TBL036N06D 数据手册

N-Channel Enhancement Mode MOSFET

TBL036N06D

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL036N06D

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

036N06D

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

110

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

440

101

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

R_θJA

T_J

1.5

°C /W

°C

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM5046A: April 2023 [1.0]

www.gmesemi.com

12 3 4 5

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