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TBL035N03-5DL8 PDF预览

TBL035N03-5DL8

更新时间: 2024-04-09 19:03:12
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 809K
描述
90A, 30V, 45W, N Channel, Power MOSFETs

TBL035N03-5DL8 数据手册

 浏览型号TBL035N03-5DL8的Datasheet PDF文件第2页浏览型号TBL035N03-5DL8的Datasheet PDF文件第3页浏览型号TBL035N03-5DL8的Datasheet PDF文件第4页浏览型号TBL035N03-5DL8的Datasheet PDF文件第5页 
N-Channel Enhancement Mode MOSFET  
TBL035N03-5DL8  
Features  
Advanced Trench technology  
Provide excellent RDS(ON) and low gate charge  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: PDFN5×6-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN5×6-8L  
Ordering Information  
Part Number  
Package  
PDFN5×6-8L  
Shipping Quantity  
Marking Code  
035N03  
TBL035N03-5DL8  
5000 pcs / Tape & Reel  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
ID  
30  
±20  
90  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Pulsed Drain Current *1  
A
ID  
60  
A
IDM  
EAS  
360  
77  
A
Single Pulse Avalanche Energy *2  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C)  
PD  
RθJC  
TJ  
45  
W
Thermal Resistance Junction-to-Case  
Operating Junction Temperature Range  
Storage Temperature Range  
2.8  
°C /W  
°C  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0555A: September 2022 [1.1]  
www.gmesemi.com  
1

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