Datasheet > TBD62785AFWG

TBD62785AFWG

更新时间： 2024-11-22 15:18:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	238K
描述
Transistor Arrays

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中文翻译

获取价格

数据手册

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TBD62785AFWG 数据手册

TBD62785APG/FWG

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

TBD62785APG, TBD62785AFWG

8-ch low active source type DMOS transistor array

TBD62785A series product is a DMOS transistor array with 8 circuits. It has

a clamp diode for switching inductive loads built-in each output. Please be

careful about thermal conditions during use.

TBD62785APG

Features

•

8 circuits built-in

High output voltage:

Large output current:

= 50 V (max)

= -500 mA (max, per 1 ch)

OUT

P-DIP18-300-2.54-001

OUT

•

Input voltage (Output on): 0 to V -3.5 V

TBD62785AFWG

Input voltage (Output off):

Package:

-0.4 V to V

CC CC

PG type

P-DIP18-300-2.54-001

FWG type P-SOP18-0812-1.27-001

P-SOP18-0812-1.27-001

Weight

Pin Connection (top view)

P-DIP18-300-2.54-001 : 1.3 g (typ.)

P-SOP18-0812-1.27-001: 0.48 g (typ.)

O1 O2 O3 O4 O5 O6 O7 O8 GND

I8 VCC

Pin Connection may be omitted partially or simplified for explanatory purposes.

2017-05-30

12 3 4 5 6 7...9

中文翻译

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