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TBD62387APG PDF预览

TBD62387APG

更新时间: 2024-11-22 15:19:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 284K
描述
Transistor Arrays

TBD62387APG 数据手册

 浏览型号TBD62387APG的Datasheet PDF文件第2页浏览型号TBD62387APG的Datasheet PDF文件第3页浏览型号TBD62387APG的Datasheet PDF文件第4页浏览型号TBD62387APG的Datasheet PDF文件第5页浏览型号TBD62387APG的Datasheet PDF文件第6页浏览型号TBD62387APG的Datasheet PDF文件第7页 
TBD62387A series  
TOSHIBA BiCD Integrated Circuit Silicon Monolithic  
TBD62387APG, TBD62387AFNG  
8-ch low active sink type DMOS transistor array  
TBD62387A series are DMOS transistor arrays with 8 circuits. They  
incorporate clamp diodes for clamping a back-EMF, which generates during  
inductive-load drive. Please be careful about thermal conditions during use.  
TBD62387APG  
Features  
Built-in 8 circuits  
High voltage  
High current  
: V  
= 50 V (max)  
= 500 mA/ch (max)  
OUT  
DIP20-P-300-2.54A  
: I  
OUT  
Input voltage (output on)  
Input voltage (output off)  
Package  
: 0 to V -3.5 V  
CC  
: V -0.4 V to 5.5 V  
CC  
: PG type DIP20-P-300-2.54A  
FNG type SSOP20-P-225-0.65A  
TBD62387AFNG  
SSOP20-P-225-0.65A  
Weight  
DIP20-P-300-2.54A : 1.4 g (typ.)  
SSOP20-P-225-0.65A : 0.1 g (typ.)  
Pin Assignment (top view)  
COMMON O1  
O2  
O3  
O4  
O5  
O6  
O7  
O8 VCC  
NC  
I1  
I2  
I3  
I4  
I5  
I6  
I7  
I8  
GND  
Pin connection may be omitted partially or simplified for explanatory purpose.  
2017-03-21  
1
©2017 TOSHIBA Corporation  

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