Datasheet > TBD62308AFG

TBD62308AFG

更新时间： 2024-11-22 15:19:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	371K
描述
Transistor Arrays

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中文翻译

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数据手册

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TBD62308AFG 数据手册

TBD62308APG/FG

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

TBD62308APG, TBD62308AFG

4channel Low active high current sink type DMOS transistor array

TBD62308APG/FG are DMOS transistor array with 4

circuits. It has a clamp diode for switching inductive loads

TBD62308APG

built-in in each output. Please be careful about thermal

conditions during use.

Features

• 4 circuits built-in

• High voltage

• High current

: V_OUT= 50 V (MAX)

: I_OUT= 1.5 A/ch (MAX)

• Input voltage(output on): V_CC- 3.5 V (MAX)

• Input voltage(output off): V_CC- 0.4 V(MIN)

TBD62308AFG

• Package

: PG type DIP16-P-300-2.54A

FG type HSOP16-P-300-1.00

Pin connection (top view)

TBD62308APG

Weight

DIP16-P-300-2.54A : 1.11 g (Typ.)

HSOP16-P-300-1.00 : 0.50 g (Typ.)

COMMON

GND

O3 COMMON

GND

VCC1

VCC2

TBD62308AFG

COMMON

GND

FIN

VCC1 O1

GND

O2 VCC2

Pin connection may be simplified for explanatory purpose.

2015-12-17

12 3 4 5 6 7...9

中文翻译

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