Datasheet > TBD62308AFAG

TBD62308AFAG

更新时间： 2024-11-22 15:18:03

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TBD62308AFAG 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	Base Number Matches：	1

TBD62308AFAG

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

TBD62308AFAG

4channel Low active high current sink type DMOS transistor array

TBD62308AFAG are DMOS transistor array with 4 circuits.

It has a clamp diode for switching inductive loads built-in in

each output. Please be careful about thermal conditions

during use.

Features

•

4 circuits built-in

• High voltage

: V_OUT= 50 V (MAX)

: I_OUT= 1.5 A/ch (MAX)

P-SSOP24-0613-1.00-001

•

High current

Weight: 0.35 g (Typ.)

•

Input voltage(output on): V_CC- 3.5 V (MAX)

Input voltage(output off): V_CC- 0.4 V (MIN)

Package

: P-SSOP24-0613-1.00-001

Pin connection (top view)

COMMON O4 I4 NC GND GND GND GND NC I3 O3 COMMON

24 23 22 21 20 19 18 17 16 15 14 13

10 11 12

VCC1 O1 I1 NC GND GND GND GND NC I2 O2 VCC2

Pin connection may be simplified for explanatory purpose.

Toshiba Electronic Devices & Storage Corporation

2017-07-14

12 3 4 5 6 7...9

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