Datasheet > TBCV47

TBCV47

更新时间： 2024-04-09 19:02:50

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	318K
描述
60V,0.5A,General Purpose NPN Bipolar Transistor

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TBCV47 数据手册

Product Specification

NPN Darlington Amplifier Transistor

TBCV27/TBCV47

FEATURES



Complementary to TBCV26, TBCV46

High collector current

High current gain

For general AF applications

Halogen free

Qualified to AEC-Q101 standards for high reliability

APPLICATIONS



NPN silicon darlington transistor

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

TBCV27

TBCV47

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

TBCV27

TBCV47

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -DC

Collector Current –Peak

Base Current -DC

500

800

100

200

350

℃

I_CM

I_B

Base Current –Peak

I_BM

Collector Dissipation

P_C

Junction and Storage Temperature

T_j,T_stg

-65 to +150

STM0717A: September 2021 [P]

www.gmesemi.com

12 3 4

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