Datasheet > TBAS16

TBAS16

更新时间： 2024-11-20 14:58:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	195K
描述
80 V/0.215 A Switching diode, SOT-23(SOT23)

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TBAS16 数据手册

TBAS16

Switching Diodes Silicon Epitaxial Planar

TBAS16

1. Applications

•

Ultra-High-Speed Switching

2. Packaging and Internal Circuit

1: Anode

2: N.C.

3: Cathode

SOT23

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Peak reverse voltage

Symbol

Note

Rating

Unit

VRM

Reverse voltage

Average rectified current

Peak forward current

215

IFM

IFSM

500

Non-repetitive peak forward surge current

Power dissipation

(Note 1)

(Note 2)



320

Junction temperature

Storage temperature

150

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Measured with a 10 ms pulse.

Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt, Cu pad: 0.42 mm2 × 3)

Start of commercial production

2016-05

2016-09-30

Rev.1.0

12 3 4 5

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