Datasheet > TB4S

TB4S

更新时间： 2024-12-01 14:53:15

品牌	Logo	应用领域
鲁光 - LGE		普通整流桥
页数	文件大小	规格书
2页	1083K
描述
普通整流桥

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中文翻译

获取价格

技术参数
数据手册

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TB4S 技术参数

Package：	TBS	Maximum recurrent peak reverse voltage：	400
Maximum average forward rectified current：	0.4	Peak forward surge current：	30
Maximum instantaneous forward voltage：	0.95	Maximum reverse current：	10
TJ(℃）：	-55～+150

TB4S 数据手册

TB2S-TB10S

SILICON BRIDGE RECTIFIERS

FEATURES

Glass passivated chip junction

High surge overload rating: 30A peak

Saves space on printed circuit boards

TBS

Min

Dim

Max

5.20

4.60

1.50

6.65

0.35

This series is UL recognized under Component Index, file number E239431

Plastic material has U/L flammability classification94V-O

High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension

4.80

4.30

1.20

6.15

0.15

0.30

0.90

0.20MAX

MECHANICAL DATA

1.35

0.60

3.80

1.65

0.80

4.20

Case: Molded plastic body over passivated junctions

All Dimensions in mm

Terminals: Plated leads solderable per MIL-STD-750, Method 2026

Maximum Ratings ^{(@TA = 25°C unless otherwise specified)}

Characteristic

Symbol

TB2S

TB4S

400

TB6S

600

TB8S

800

TB10S

1000

700

UNITS

Peak Repetitive Reverse Voltage

V_RRM

200

RMS Reverse Voltage

DC Blocking Voltage

V_RMS

140

280

420

560

V_DC

200

400

600

0.8¹⁾

1.0²⁾

800

1000

Maximum average forward Output current T_L=100°C

I_F(AV)

I_FSM

I²t

Peak forward surge current

8.3ms single half-sine-wave

superimposed on rated load

Current squared time t < 8.3ms , Ta = 25℃

3.74

A²s

Thermal Characteristics

Characteristic

Symbol

TB2S

TB4S

TB6S

TB8S

TB10S

UNITS

Typical thermal resistance junction to lead

On aluminum substrate

R _ΘJL

R _{θ JA}

℃/W

℃

Operating junction temperature range

Storage temperature range

T_J

- 55 ---- + 150

T_STG

Electrical Characteristics ^{(@TA = 25°C unless otherwise specified)}

Characteristic

Symbol

TB2S

TB4S

TB6S

TB8S

TB10S

UNITS

Maximum instantaneous forward voltage at 0.4 A

V_F

0.95

Maximum reverse current @T_A=25

at rated DC blocking voltage

I_R

μ A

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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