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TB28F008SA-100 PDF预览

TB28F008SA-100

更新时间: 2024-11-13 22:20:11
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
33页 467K
描述
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY

TB28F008SA-100 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP44,.63
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.79Is Samacsys:N
最长访问时间:100 ns其他特性:DEEP POWER-DOWN
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:16
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:12 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:2.95 mm
部门规模:64K最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:MOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:13.3 mm
Base Number Matches:1

TB28F008SA-100 数据手册

 浏览型号TB28F008SA-100的Datasheet PDF文件第2页浏览型号TB28F008SA-100的Datasheet PDF文件第3页浏览型号TB28F008SA-100的Datasheet PDF文件第4页浏览型号TB28F008SA-100的Datasheet PDF文件第5页浏览型号TB28F008SA-100的Datasheet PDF文件第6页浏览型号TB28F008SA-100的Datasheet PDF文件第7页 
28F008SA  
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY  
Extended Temperature Specifications Included  
Y
Y
Y
High-Density Symmetrically-Blocked  
Architecture  
Ð Sixteen 64-Kbyte Blocks  
Deep Power-Down Mode  
Ð 0.20 mA I Typical  
CC  
Y
Very High-Performance Read  
Ð 85 ns Maximum Access Time  
Extended Cycling Capability  
Ð 100,000 Block Erase Cycles  
Ð 1.6 Million Block Erase  
Cycles per Chip  
Y
Y
SRAM-Compatible Write Interface  
Hardware Data Protection Feature  
Ð Erase/Write Lockout during Power  
Transitions  
Y
Y
Automated Byte Write and Block Erase  
Ð Command User Interface  
Ð Status Register  
Y
Y
Industry Standard Packaging  
Ð 40-Lead TSOP, 44-Lead PSOP  
System Performance Enhancements  
Ý
Ð RY/BY Status Output  
Ð Erase Suspend Capability  
ETOX III Nonvolatile Flash Technology  
Ð 12V Byte Write/Block Erase  
Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for sol-  
id-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time,  
write automation and low power consumption provide a more reliable, lower power, lighter weight and higher  
performance alternative to traditional rotating disk technology. The 28F008SA brings new capabilities to porta-  
ble computing. Application and operating system software stored in resident flash memory arrays provide  
instant-on, rapid execute-in-place and protection from obsolescence through in-system software updates.  
Resident software also extends system battery life and increases reliability by reducing disk drive accesses.  
For high density data acquisition applications, the 28F008SA offers a more cost-effective and reliable alterna-  
tive to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can  
take advantage of the 28F008SA’s nonvolatility, blocking and minimal system code requirements for flexible  
firmware and modular software designs.  
The 28F008SA is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages. Pin assign-  
ments simplify board layout when integrating multiple devices in a flash memory array or subsystem. This  
device uses an integrated Command User Interface and state machine for simplified block erasure and byte  
write. The 28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks.  
Intel’s 28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise  
immunity. Its 85 ns access time provides superior performance when compared with magnetic storage media.  
A deep powerdown mode lowers power consumption to 1 mW typical thru V , crucial in portable computing,  
CC  
handheld instrumentation and other low-power applications. The RP power control input also provides  
absolute data protection during system powerup/down.  
Ý
Manufactured on Intel’s 0.8 micron ETOX process, the 28F008SA provides the highest levels of quality,  
reliability and cost-effectiveness.  
*Other brands and names are the property of their respective owners.  
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or  
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make  
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.  
©
COPYRIGHT INTEL CORPORATION, 1995  
November 1995  
Order Number: 290429-005  

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