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TB28F004SC-100 PDF预览

TB28F004SC-100

更新时间: 2024-11-13 22:16:43
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
42页 723K
描述
BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMILY 4, 8, AND 16 MBIT

TB28F004SC-100 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:13.30 X 28.20 MM, PLASTIC, SOP-44针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
Is Samacsys:N最长访问时间:100 ns
其他特性:USER SELECTABLE 5V OR 12V VPP命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PDSO-G44
长度:28.2 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3/5 V编程电压:3.3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:2.95 mm部门规模:64K
最大待机电流:0.00002 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:MOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

TB28F004SC-100 数据手册

 浏览型号TB28F004SC-100的Datasheet PDF文件第2页浏览型号TB28F004SC-100的Datasheet PDF文件第3页浏览型号TB28F004SC-100的Datasheet PDF文件第4页浏览型号TB28F004SC-100的Datasheet PDF文件第5页浏览型号TB28F004SC-100的Datasheet PDF文件第6页浏览型号TB28F004SC-100的Datasheet PDF文件第7页 
PRELIMINARY  
E
BYTE-WIDE  
SmartVoltage FlashFile™ MEMORY FAMILY  
4, 8, AND 16 MBIT  
28F004SC, 28F008SC, 28F016SC  
Includes Commercial and Extended Temperature Specifications  
SmartVoltage Technology  
High-Density 64-Kbyte Symmetrical  
Erase Block Architecture  
4 Mbit: Eight Blocks  
2.7 V (Read-Only), 3.3 V or 5 V VCC  
and 3.3 V, 5 V, or 12 V VPP  
8 Mbit: Sixteen Blocks  
16 Mbit: Thirty-Two Blocks  
High-Performance  
4, 8 Mbit 85 ns Read Access Time  
16 Mbit 95 ns Read Access Time  
Extended Cycling Capability  
100,000 Block Erase Cycles  
Enhanced Data Protection Features  
Absolute Protection with VPP = GND  
Flexible Block Locking  
Low Power Management  
Deep Power-Down Mode  
Block Write Lockout during Power  
Transitions  
Automatic Power Savings Mode  
Decreases ICC in Static Mode  
Enhanced Automated Suspend Options  
Program Suspend to Read  
Automated Program and Block Erase  
Command User Interface  
Status Register  
Block Erase Suspend to Program  
Block Erase Suspend to Read  
SRAM-Compatible Write Interface  
Industry-Standard Packaging  
40-Lead TSOP, 44-Lead PSOP  
and 40 Bump µBGA* CSP  
ETOX™ V Nonvolatile Flash  
Technology  
Intel’s byte-wide SmartVoltage FlashFile™ memory family renders a variety of density offerings in the same  
package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile,  
read/write storage solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible  
voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs,  
and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage  
applications. For secure code storage applications, such as networking, where code is either directly  
executed out of flash or downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels  
of protection: absolute protection with VPP at GND, selective hardware block locking, or flexible software  
block locking. These alternatives give designers ultimate control of their code security needs.  
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. They come in  
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged  
44-lead PSOP. Based on the 28F008SA architecture, the byte-wide SmartVoltage FlashFile memory family  
enables quick and easy upgrades for designs that demand state-of-the-art technology.  
December 1997  
Order Number: 290600-003  

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