Datasheet > TB1S~TB10S

TB1S~TB10S

更新时间： 2024-09-24 17:01:43

品牌	Logo	应用领域
芯派科技 - SEMIPOWER		/
页数	文件大小	规格书
3页	209K
描述
Bridge Rectifiers

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中文翻译

获取价格

数据手册

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TB1S~TB10S 数据手册

TB1S THRU TB10S

0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

FEATURES:

PINNING

• Glass Passivated Chip Junction

• Reverse Voltage - 100 to 1000 V

• Forward Current - 0.8 A

DESCRIPTION

Input Pin（~）

• High Surge Current Capability

• Designed for Surface Mount Application

Output Anode（+）

Output Cathode（-）

MECHANICAL DATA

• Case: ABS/LBF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 88mg / 0.0031oz

ABS/LBF Package

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

Symbols

V_RRM

TB1S

100

TB2S

200

140

200

TB4S

TB6S

TB8S

800

560

800

TB10S

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Units

600

400

1000

V_RMS

420

600

280

400

700

Maximum DC Blocking Voltage

V_DC

1000

100

Average Rectified Output Current

at T_c= 125 °C

I_O

0.8

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

@I_F= 0.4A

@I_F= 0.8A

1.0

1.1

Forward Voltage per element

V_F

@T_A=25 °C

@T_A=100℃

@T_A=125 °C

5.0

100

Maximum DC Reverse Current

at Rated DC Blocking Voltage

μA

I_R

R_θJA

R_θJC

°C/W

°C

Typical Thermal Resistance（Note2）

Operating and Storage Temperature Range

T_j, T_stg

-55 ~ +150

Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.

2. Mounted on glass epoxy PC board with 4×1.5"×1.5"（3.81×3.81 cm）copper pad.

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