Datasheet > TARF2201

TARF2201

更新时间： 2024-09-23 19:16:27

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
8页	172K
描述
RF/Microwave Amplifier, 1 Func, BIPolar,

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技术参数
数据手册

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TARF2201 技术参数

生命周期：	Contact Manufacturer	包装说明：	SOT-343R
Reach Compliance Code：	unknown	风险等级：	5.84
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOT-343R	电源：	3 V
子类别：	RF/Microwave Amplifiers	最大压摆率：	45 mA
技术：	BIPOLAR

TARF2201 数据手册

SiGe HBT MMIC Wideband Linear Amplifier

TARF2201

SiGe HBT MMIC

Wideband Linear Amplifier

Descriptions

TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest

Silicon Germanium Hetero Junction Bipolar Transistor (TAHB09) process of Tachyonics Co.,

which has 30GHz f_T(Normal). TARF2201 uses a Darlington pair topology with resistive

feedback for broad band performance as well as stability over its entire temperature range.

TARF2201 also has internally matched 50 ohm impedance and wide bandwidth.

Features

- DC to 3000 MHz Operation

- Internally matched to 50 Ohm Input & Output

- Single Voltage Supply

- Output 1dB compression point : 12dBm at 900MHz

SOT343

Applications

- Oscillator Amplifier

- Final Power Amplifier for Low Power Application

- IF/RF Buffer Amplifier

- Driver for CATV Amplifier

General Function Block Diagram

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Tel : 82-2-818-9829

Fax : 82-2-818-9635

60-8, Gasan-dong, Kumchun-Gu,

Seoul, Korea. 153-023

http://www.tachyonics.co.kr

October. 2002.

Rev. 1.0

Page 1 of 8

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