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TARF2106 PDF预览

TARF2106

更新时间: 2024-11-23 20:09:35
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
9页 139K
描述
RF/Microwave Amplifier, 1 Func, BIPolar,

TARF2106 数据手册

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PRELIMINARY  
TARF2106  
SiGe HBT MMIC  
Differential Input Mode POWER AMPLIFIER  
Description  
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the TARF2106 is  
designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless  
technology and 2.4GHz cordless telephone applications. It delivers +22.0 dBm output  
power, making it capable of overcoming insertion losses of up to 2.0dB between amplifier  
output and antenna.  
An on-chip ramping circuit provides the turn-on/off switching of amplifier output with  
less than 3dB overshoot, meeting the Bluetoothtm specification 1.1.  
The TARF2106 operates at 3.0V DC. Its current consumption is 150 mA.  
The general Power Amplifier has to be used an external balun at the input stage to  
converter from differential signals to common signal. But the TARF2106 is designed to  
receive the differential signals directly, so no need the external balun.  
The silicon/silicon-germanium structure of the TARF2106, and its exposed-die-pad  
package, soldered to the system PCB, provide high thermal conductivity and subsequently  
low junction temperature.  
Features  
Differential Input Mode  
High +22.0 dBm Output Power  
2.4GHz to 2.5GHz Frequency Range  
Power-control and Power-down modes  
Single 3.0 V Supply Operation  
Temperature Rating: -40to +85℃  
Exposed Pad TSSOP8 Plastic Package  
E_PAD TSSOP8  
Applications  
Bluetooth Wireless Technology (Class 1)  
USB Dongles, modules  
PCMCIA, Flash cards  
Access Points  
2.4GHz cordless telephone  
60-8, Gasan-dong, Kumchun-Gu  
Seoul, Korea. 153-023  
Tel : 82-2-818-9829  
Fax : 82-2-818-9635  
http://www.tachyonics.co.kr  
2002. 11  
Page 1 of 9  
Rev. 1.1  

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