Datasheet > TARF1510U

TARF1510U

更新时间： 2024-09-23 14:45:07

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
12页	261K
描述
Transistor,

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中文翻译

获取价格

数据手册

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TARF1510U 数据手册

Preliminary

TARF1510U

NPN Planer RF TRANSISTOR

SOT- 323

unit : mm

□ DESCRIPTION

The TARF1510U is a low Noise figure and good associated

gain performance at UHF,VHF and Microwave frequencies

It is suitable for a high density surface mount since

transistor has been SOT323 package

□ FEATURES

o Low Noise Figure

N.F = 1.5dB TYP. @ f=2GHz, V_CE=3V, Ic=7mA

N.F = 1.7dB TYP. @ f=2GHz, V_CE=1V, Ic=3mA

o High Gain

MAG = 9dB TYP. @ f=2GHz, V_CE=3V, Ic=20mA

MAG = 6dB TYP. @ f=2GHz, V_CE=1V, Ic=3mA

o High Transition Frequency

f_T= 7GHz TYP. @ f=2GHz, V_CE=3V, Ic=20mA

f_T= 4GHz TYP. @ f=2GHz, V_CE=1V, Ic=3mA

PIN CONFIGURATION

PIN NO SYMBOL DESCRIPTION

Base

Emitter

Collector

□ MARKING : AK1

□ MAXIMUM RATINGS

SYMBOL

PARAMETER

CONDITION

VALUE

Unit

5.5

V^CBO

V^CEO

V^EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Open Emitter

Open Base

2.5

Open Collector

100

℃

Collector Current (DC)

Total Power Dissipation

Storage Temperature

150

P^T

Ts = 60℃

-65 ~ 150

150

T^STG

T^J

Operating Junction Temperature

℃

www.tachyonics.co.kr

- 1/12 -

Oct-2002

12 3 4 5 6 7...12

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