Datasheet > TARF1503UF

TARF1503UF

更新时间： 2024-11-19 19:52:51

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
10页	179K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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TARF1503UF 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	0.065 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.15 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TARF1503UF 数据手册

TARF1503UF

NPN Planer RF TRANSISTOR

SOT- 323F

unit : mm

□ DESCRIPTION

The TARF1503UF is a low Noise figure and good associated

gain performance at UHF,VHF and Microwave frequencies

It is suitable for a high density surface mount since

transistor has been SOT323F package

□ FEATURES

o Low Noise Figure

N.F = 1.1dB TYP. @ f=1GHz, V_CE=8V, Ic=5mA

o High Gain

MAG = 18.5dB TYP. @ f=1GHz, V_CE=8V, Ic=15mA

o High Transition Frequency

f_T= 10GHz TYP. @ f=1GHz, V_CE=8V, Ic=15mA

PIN CONFIGURATION

PIN NO SYMBOL DESCRIPTION

Base

Emitter

Collector

□ MARKING : AA1

□ MAXIMUM RATINGS

SYMBOL

PARAMETER

CONDITION

VALUE

Unit

V^CBO

V^CEO

V^EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Open Emitter

Open Base

2.5

Open Collector

℃

Collector Current (DC)

Total Power Dissipation

Storage Temperature

150

Ts = 60℃

-65 ~ 150

150

T^STG

T^J

Operating Junction Temperature

℃

www.tachyonics.co.kr

Sep-03-2002

- 1/10 -

12 3 4 5 6 7...10

中文翻译

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