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TARF1503U PDF预览

TARF1503U

更新时间: 2024-11-19 20:07:23
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
10页 172K
描述
Transistor,

TARF1503U 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
最大集电极电流 (IC):0.065 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

TARF1503U 数据手册

 浏览型号TARF1503U的Datasheet PDF文件第2页浏览型号TARF1503U的Datasheet PDF文件第3页浏览型号TARF1503U的Datasheet PDF文件第4页浏览型号TARF1503U的Datasheet PDF文件第5页浏览型号TARF1503U的Datasheet PDF文件第6页浏览型号TARF1503U的Datasheet PDF文件第7页 
TARF1503U  
NPN Planer RF TRANSISTOR  
SOT- 323  
unit : mm  
DESCRIPTION  
The TARF1503U is a low Noise figure and good associated  
gain performance at UHF,VHF and Microwave frequencies  
It is suitable for a high density surface mount since  
transistor has been SOT323 package  
FEATURES  
o Low Noise Figure  
N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA  
o High Gain  
MAG = 17dB TYP. @ f=1GHz, VCE=8V, Ic=15mA  
o High Transition Frequency  
fT = 10GHz TYP. @ f=1GHz, VCE=8V, Ic=15mA  
PIN CONFIGURATION  
PIN NO SYMBOL DESCRIPTION  
1
2
3
B
E
C
Base  
Emitter  
Collector  
MARKING : AA1  
MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
CONDITION  
VALUE  
Unit  
25  
12  
V
V
VCBO  
VCEO  
VEBO  
Ic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Open Emitter  
Open Base  
2.5  
V
Open Collector  
65  
mA  
mW  
Collector Current (DC)  
Total Power Dissipation  
Storage Temperature  
150  
PT  
Ts = 60  
-65 ~ 150  
150  
TSTG  
TJ  
Operating Junction Temperature  
www.tachyonics.co.kr  
- 1/10 -  
Sep-03-2002  

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