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TAN250A

更新时间: 2024-01-20 05:41:17
品牌 Logo 应用领域
ASI 晶体射频双极晶体管
页数 文件大小 规格书
1页 26K
描述
RF POWER TRANSISTOR

TAN250A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.11
Base Number Matches:1

TAN250A 数据手册

  
TAN250A  
RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI TAN250A is a Common  
Base Transistor Designed for DME,  
TACAN and IFF Pulse Power Amplifier  
Applications.  
PACKAGE STYLE  
FEATURES INCLUDE:  
· Gold Metallization  
· Hermetic Package  
· Input/Output Matching  
MAXIMUM RATINGS  
IC  
30 A  
VCB  
60 V  
PDISS  
575 W @ TC = 25 OC  
TJ  
-65 OC to +200 OC  
-65 OC to +200 OC  
0.30 OC/W  
TSTG  
qJC  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
BVCES  
BVEBO  
ICBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 20 mA  
IC = 25 mA  
IE = 20 mA  
VCB = 50 V  
VCE = 5 V  
60  
V
RBE = 10 W  
60  
V
4.0  
V
12  
mA  
---  
hFE  
IC = 1.0 A  
20  
120  
POUT  
250  
6.0  
W
dB  
%
VCC = 50 V  
PIN = 13 W  
f = 960 to 1215 MHz  
Duty Cycle = 5 %  
PG  
h C  
7.0  
40  
Pulse Width = 20 mS  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  

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