Datasheet > TAN250A

TAN250A

更新时间： 2024-09-24 03:29:03

品牌	Logo	应用领域
GHZTECH		晶体双极型晶体管
页数	文件大小	规格书
3页	204K
描述
high power COMMON BASE bipolar transistor.

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技术参数
数据手册

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TAN250A 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	最大集电极电流 (IC)：	30 A
配置：	Single	最小直流电流增益 (hFE)：	10
最高工作温度：	200 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	575 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

TAN250A 数据手册

TAN 250A

250 Watts, 50 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55AW, STYLE 1

The TAN 250A is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 960-1215 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input output prematch for broadband

capability. Low thermal resistance package reduces junction temperature,

extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC²

575 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage

BVebo Emitter to Base Voltage

60 Volts

4.0 Volts

30 Amps

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 960-1215 MHz

Vcc = 50 Volts

250

Watts

Pout

6.0

7.0

PW = 20 sec

DF = 5%

F = 1090 MHz

5:1

VSWR

Emitter to Base Breakdown

Collector to Emitter Breakdown

C - Current Gain

Ie = 20 mA

Ic = 25 mA

Ic = 1A, Vce = 5V

See Chart

4.0

Volts

BVebo

BVces

h_FE

^oC/W

Thermal Resistance

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Issue B, July 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE

THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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