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TAN150 PDF预览

TAN150

更新时间: 2024-09-24 06:15:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 脉冲
页数 文件大小 规格书
3页 73K
描述
150 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

TAN150 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XDFM-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.6
Base Number Matches:1

TAN150 数据手册

 浏览型号TAN150的Datasheet PDF文件第2页浏览型号TAN150的Datasheet PDF文件第3页 
TAN150  
150 Watts, 50 Volts, Pulsed  
Avionics 960 - 1215 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55AT, Style 1  
The TAN150 is a high powered COMMON BASE bipolar transistor. It is  
designed for pulsed systems in the frequency band 960-1215 MHz. The device  
has gold thin-film metallization and diffused ballasting for proven highest  
MTTF. The transistor includes input and output prematch for broadband  
capability. Low thermal resistance package reduces junction temperature,  
extends life.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation  
Device Dissipation @25°C  
583 W  
Maximum Voltage and Current  
Collector to Base Voltage (BVces)  
55 V  
3.5 V  
15.0 A  
Emitter to Base Voltage (BVebo  
Collector Current (Ic)  
)
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65 to +150 °C  
+200 °C  
ELECTRICAL CHARACTERISTICS @ 25°C  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNITS  
Pout  
Pin  
Power Out  
F
= 960-1215 MHz  
150  
W
W
dB  
%
Power Input  
Vcc = 50 Volts  
PW = 20 µsec  
DF = 5%  
30  
Pg  
Power Gain  
7.0  
Collector Efficiency  
Load Mismatch Tolerance  
38  
ηc  
VSWR  
F = 1090 MHz  
10:1  
FUNCTIONAL CHARACTERISTICS @ 25°C  
BVebo  
BVces  
hFE  
θjc1  
Emitter to Base Breakdown  
Ie = 10 mA  
3.5  
55  
10  
V
V
Collector to Emitter Breakdown Ic = 50 mA  
DC – Current Gain  
Thermal Resistance  
Vce = 5V, Ic = 1 A  
0.3  
°C/W  
NOTE 1: At rated output power and pulse conditions  
.
Rev A: Updated June 2009  
MICROSEMI. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. MICROSEMI RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE  
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
Microsemi: 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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