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T930N36TOF VT PDF预览

T930N36TOF VT

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 292K
描述
T930N 相位控制晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳,外壳直径 75mm,高度 26mm。

T930N36TOF VT 数据手册

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Datenblatt / Data sheet  
N
Netz-Thyristor  
Phase Control Thyristor  
T930N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
3200 V  
3400 V  
3600 V  
3200 V  
3400 V  
3600 V  
Tvj = -40°C... Tvj max  
VDRM,VRRM  
PeriodischeVorwärts- und Rückwärts-Spitzensperrspannung  
repetitive peak forward off-state and reverse voltages  
Vorwärts-Stossspitzensperrspannung  
non-repetitive peak forward off-state voltage  
Tvj = -40°C... Tvj max  
VDSM  
3300 V  
3500 V  
3700 V  
Rückwärts-Stossspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
2200 A  
Durchlassstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
930 A  
TC = 85 °C  
1340 A  
2110 A  
Dauergrenzstrom  
TC = 55 °C, θ = 180°sin, tP = 10 ms ITAVM  
average on-state current  
Durchlaßstrom-Effektivwert  
RMS on-state current  
ITRMS  
19500 A  
17500 A  
Tvj = 25 °C °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
Stossstrom-Grenzwert  
surge current  
ITSM  
1900 10³ A²s  
1530 10³ A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 60747-6  
80 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
1000 V/µs  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
5.Kennbuchstabe / 5th letter F  
Charakteristische Werte / Characteristic values  
Durchlassspannung  
on-state voltage  
max.  
max.  
2,70 V  
1,48 V  
Tvj = Tvj max, iT = 3600 A  
Tvj = Tvj max, iT = 1000 A  
vT  
1,00 V  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Durchlasskennlinie  
on-state characteristic  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,43 mΩ  
200 A iT 4700 A  
A=  
1,166E+00  
B=  
C=  
D=  
3,485E-04  
-7,225E-02  
1,453E-02  
vT = A + B iT + C ln(iT + 1) + D  
iT  
Zündstrom  
Tvj = 25 °C, vD = 12V  
Tvj = 25 °C, vD = 12V  
IGT  
max.  
250 mA  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
VGT  
IGD  
max.  
2,2 V  
Tvj = Tvj max, vD = 12V  
Tvj = Tvj max, vD = 0,5 VDRM  
max.  
max.  
10 mA  
5 mA  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
Tvj = Tvj max, vD = 0,5 VDRM  
VGD  
IH  
max.  
0,25 V  
Haltestrom  
holding current  
Tvj = 25°C, vD = 12V  
max.  
500 mA  
Einraststrom  
latching current  
Tvj = 25°C, vD = 12V, RGK 10 Ω  
IL  
max. 2500 mA  
iGM = 1 A, diG/dt = 1 A/µs,  
tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Zündverzug  
gate controlled delay time  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
250 mA  
4,5 µs  
vD = VDRM, vR = VRRM  
DIN IEC 60747-6  
Tvj = 25 °C, iGM = 1 A,  
diG/dt = 1 A/µs  
H.Sandmann  
date of publication: 2009-03-04  
prepared by:  
revision:  
1.0  
approved by: M.Leifeld  
IFBIP D AEC / 2009-03-04 / H.Sandmann  
A 05/09  
Seite/page  
1/10  

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