Datasheet > T533N80TOH PR

T533N80TOH PR

更新时间： 2024-09-17 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	319K
描述
T533N 光触发晶闸管盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 76mm，高度 35mm。

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T533N80TOH PR 数据手册

Technische Information /

technical information

Netz-Thyristor

Phase Control Thyristor

T533N

Key Parameters

V_BO/ V_RRM

7500V / 8000V

I_TAVM

540A (T_C=85°C)

10500A

I_TSM

v_T0

1,26V

r_T

1,47mΩ

20,0K/kW

15 … 24kN

76mm

R_thJC

Clamping Force

Max. Diameter

Contact Diameter

Height

50mm

35mm

For type designation please refer to actual

shortform catalog

http://www.ifbip.com/catalog

Merkmale

Features



Direkt lichtgezündeter Thyristor mit integrierter

Schutzfunktion



Light triggered thyristor with internal Break

over Diode

Volle Sperrfähigkeit 50/60Hz über einen weiten

Temperaturbereich

Full blocking 50/60Hz over a wide range

temperature range



Hohe DC Sperrstabilität



High DC blocking stability

High surge current capability

High case non-rupture current

Hohe Stoßstrombelastbarkeit

Hoher Gehäusebruchstrom

Typische Anwendungen

Typical Applications



Mittelspannungssanftanlasser

Statische Kompensation SVC

Lastgeführte Umrichter



Medium Voltage Softstarter

Static Var Compensation SVC

Load Commutating Inverter

Crowbar Applications

Kurzschließer-Applikationen

Pulsed Power Applikationen

Pulsed Power Applications

4.1

content of customer DMX code

DMX code

digit

DMX code

digit quantity

serial number

1..7

8..16

SP material number

datecode (production day)

datecode (production year)

datecode (production month)

vT class

17..18

19..20

21..22

23..26

27..30

QR class

www.ifbip.com

support@infineon-bip.com

Date of Publication: 2014-01-23

Revision: 3.0

Seite/page: 1/9

12 3 4 5 6 7...10

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