Datasheet > T491X226K035A5

T491X226K035A5

更新时间： 2024-11-26 04:29:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
15页	525K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

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T491X226K035A5 数据手册

Document Number: MRF5S4125N

Rev. 0, 1/2007

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S4125NR1

MRF5S4125NBR1

Designed for broadband commercial and industrial applications with

frequencies up to 500 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 465 MHz: V_DD= 28 Volts,

450-480 MHz, 25 W AVG., 28 V

SINGLE N-CDMA

_DQ= 1100 mA, P_out= 25 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 23 dB

Drain Efficiency — 30.2%

ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

CASE 1486-03, STYLE 1

TO-270 WB-4

MRF5S4125NR1

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484-04, STYLE 1

TO-272 WB-4

MRF5S4125NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-0.5, +15

- 65 to +150

200

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

DSS

stg

(1,2)

Operating Junction Temperature

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 90°C, 125 W CW

Case Temperature 90°C, 25 W CW

°C/W

0.33

0.43

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S4125NR1 MRF5S4125NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

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与T491X226K035A5相关器件

型号	品牌	获取价格	描述	数据表
T491X226K035AG	CDE	获取价格	CAPACITOR, TANTALUM, SOLID, POLARIZED, 35V, 22uF, SURFACE MOUNT, 2917, CHIP
T491X226K035AH	KEMET	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, 22uF, Surfac
T491X226K035AS	CDE	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, -/+10ppm/Cel
T491X226K035AS	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
T491X226K035ASC-7280	KEMET	获取价格	Tantalum Capacitor, Polarized, Tantalum, 35V, 10% +Tol, 10% -Tol, 22uF, 2917,
T491X226K035AS-F	CDE	获取价格	Solid Tantalum Chip Capacitors
T491X226K035AT	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
T491X226K035AT	CDE	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, -/+10ppm/Cel
T491X226K035AT7280	KEMET	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, 22uF, Surfac
T491X226K035ATAUTO	KEMET	获取价格	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, 22uF, Surfac

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