Datasheet > T436416D

T436416D

更新时间： 2024-11-01 03:29:43

品牌	Logo	应用领域
TMT		动态存储器
页数	文件大小	规格书
73页	710K
描述
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM

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T436416D 数据手册

tmCH

T436416D

4M x 16 SDRAM

SDRAM

1M x 16bit x 4Banks Synchronous DRAM

FEATURES

GRNERAL DESCRIPTION

Fast access time from clock: 4.5/5/5.4 ns

Fast clock rate: 200/166/143 MHz

Fully synchronous operation

The T436416D SDRAM is a high-speed CMOS

synchronous DRAM containing 64 Mbits. It is internally

configured as 4 Banks of 1M word x 16 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal, CLK). Read and write

accesses to the SDRAM are burst oriented; accesses

start at a selected location and continue for a

programmed number of locations in a programmed

sequence. Accesses begin with the registration of a

BankActivate command which is then followed by a

Read or Write command.

•

Internal pipelined architecture

1M word x 16-bit x 4-bank

Programmable Mode registers

- CAS# Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

The T436416D provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy to

use.

Auto Refresh and Self Refresh

4096 refresh cycles/64ms

CKE power down mode

•

Single +3.3V ± 0.3V power supply

Interface: LVTTL

54-pin 400 mil plastic TSOP II package

60-Ball, 6.4 mm x 10.1 mm TFBGA package

By having a programmable mode register, the

system can choose the most suitable modes to maximize

its performance. These devices are well suited for

applications requiring high memory bandwidth and

particularly well suited to high performance PC

applications.

Key Specifications

T436416D

5/6/7

5/6/7 ns

t_CK3Clock Cycle time(min.)

t_AC3Access time from CLK(max.)

t_RASRow Active time(min.)

t_RCRow Cycle time(min.)

4.5/5/5.4/ ns

35/42/45 ns

50/60/63 ns

ORDERING INFORMATION

Part Number

Frequency

Package

T436416D-5S/-5C

200MHz TSOP II / TFBGA

T436416D-5SG/-5CG 200MHz TSOP II / TFBGA

T436416D-6S/-6C 166MHz TSOP II / TFBGA

T436416D-6SG/-6CG 166MHz TSOP II / TFBGA

T436416D-7S/-7C 143MHz TSOP II / TFBGA

T436416D-7SG/-7CG 143MHz TSOP II / TFBGA

S : indicates TSOPII Package,

C : indicates TFBGA Package,

G : indicates Pb Free Package

TM Technology Inc. reserves the right

to change products or specifications without notice.

P. 1

Publication Date: FEB. 2007

Revision: A

12 3 4 5 6 7...73

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与T436416D相关器件

型号	品牌	获取价格	描述	数据表
T436416D-5C	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5CG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5S	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5SG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6C	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6CG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6S	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6SG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-7C	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-7CG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM

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