Datasheet > T436416C-6SG

T436416C-6SG

更新时间： 2024-10-31 22:42:31

品牌	Logo	应用领域
TMT		动态存储器
页数	文件大小	规格书
28页	649K
描述
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM

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中文翻译

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T436416C-6SG 数据手册

tmCH

T436416C

4M x 16 SDRAM

SDRAM

1M x 16bit x 4Banks Synchronous DRAM

FEATURES

GRNERAL DESCRIPTION

• 3.3V power supply

• Four banks operation

• LVTTL compatible with multiplexed address

• All inputs are sampled at the positive going

edge of system clock

The T436416C is 67,108,864 bits synchronous

high data rate Dynamic RAM organized as

4 x 1,048,576 words by 16 bits , fabricated with

high performance CMOS technology .

Synchronous design allows precise cycle control

with the use of system clock I/O transactions are

possible on every clock cycle. Range of operating

frequencies, programmable burst length and

programmable latencies allow the same device to

be useful for a variety of high bandwidth, high

performance memory system applications.

• DQM for masking

• Auto refresh and self refresh

• 64ms refresh period

• 15.6 us refresh interval.

• MRS cycle with address key programs

- CAS Latency ( 2 & 3 )

- Burst Length ( 1 , 2 , 4 , 8 & full page)

- Burst Type (Sequential & Interleave)

• Available package type in 54 pin TSOP(II)

• Operating temperature : 0 ~ +70 °C

PIN ARRANGEMENT (Top View)

ORDERING INFORMATION

V s s

5 4

5 3

5 2

5 1

5 0

4 9

4 8

4 7

4 6

4 5

4 4

4 3

4 2

4 1

4 0

3 9

3 8

3 7

MAX

D Q 0

D Q 1 5

PACKAGE

PART NO.

FREQUENCY

V S S Q

D Q 1

D Q 2

D Q 1 4

D Q 1 3

54 pin TSOP(II)

T436416C-6S

T436416C-7S

166 MHz

S S Q

D Q 3

D Q 4

V D D Q

143 MHz

166 MHz

D Q 1 2

D Q 1 1

54 pin TSOP(II)

lead-free

54 pin TSOP(II)

lead-free

T436416C-6SG

T436416C-7SG

D D Q

S S Q

D Q 5

D Q 6

D Q 1 0

D Q 9

1 0

143 MHz

1 1

1 2

S S Q

5 4 P I N T S O P ( II)

( 4 0 0 m il 8 7 5 m il )

( 0 .8 m m P IN P IT C H )

1 3

1 4

D Q 7

D Q 8

V s s

D D

N .C / R F U

U D Q M

C L K

C K E

N .C

L D Q M

1 5

1 6

1 7

1 8

1 9

2 0

2 1

2 2

2 3

2 4

2 5

2 6

2 7

C A S

R A S

C S

3 6

3 5

3 4

3 3

3 2

3 1

3 0

2 9

2 8

A 1 3

A 1 2

A 1 0 / A P

A 0

A 1 1

A 9

A 8

A 7

A 1

A 6

A 2

A 5

A 3

A 4

V s s

TM Technology Inc. reserves the right

to change products or specifications without notice.

P. 1

Publication Date: AUG. 2004

Revision: A

12 3 4 5 6 7...28

中文翻译

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与T436416C-6SG相关器件

型号	品牌	获取价格	描述	数据表
T436416C-7S	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7SG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5C	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5CG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5S	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5SG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6C	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6CG	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-6S	TMT	获取价格	4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM

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