5秒后页面跳转
T435-800B PDF预览

T435-800B

更新时间: 2024-11-20 22:17:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
8页 120K
描述
4A TRIACS

T435-800B 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.2
Is Samacsys:N外壳连接:MAIN TERMINAL 2
配置:SINGLE关态电压最小值的临界上升速率:250 V/us
最大直流栅极触发电流:35 mA最大直流栅极触发电压:1.5 V
最大维持电流:35 mAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大漏电流:0.01 mA
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:110 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
触发设备类型:SNUBBERLESS TRIACBase Number Matches:1

T435-800B 数据手册

 浏览型号T435-800B的Datasheet PDF文件第2页浏览型号T435-800B的Datasheet PDF文件第3页浏览型号T435-800B的Datasheet PDF文件第4页浏览型号T435-800B的Datasheet PDF文件第5页浏览型号T435-800B的Datasheet PDF文件第6页浏览型号T435-800B的Datasheet PDF文件第7页 
T4 Series  
®
SNUBBERLESS™ & LOGIC LEVEL  
4A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
4
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 to 800  
V
A2  
DRM RRM  
A2  
I
5 to 35  
mA  
GTT (Q )  
1
A1  
A2  
G
A1  
A2  
G
DPAK  
(T4-B)  
IPAK  
(T4-H)  
DESCRIPTION  
Based on ST’s Snubberless / Logic level technolo-  
gy providing high commutation performances, the  
T4 series is suitable for use on AC inductive loads.  
They are recommended for applications using  
universal motors, electrovalves.... such as kitchen  
aid equipments, power tools, dishwashers,...  
Available in a fully insulated package, the  
T4...-...W version complies with UL standards (ref.  
E81734).  
A2  
A1  
A2  
A1  
A2  
G
G
ISOWATT 220AB  
(T4-W)  
TO-220AB  
(T4-T)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (full sine wave)  
DPAK / IPAK  
TO-220AB  
A
T(RMS)  
Tc = 110°C  
4
ISOWATT 220AB  
F = 50 Hz  
Tc = 105°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
30  
31  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
5.1  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
June 2003 - Ed: 5  
1/8  

T435-800B 替代型号

型号 品牌 替代类型 描述 数据表
T435-600B STMICROELECTRONICS

完全替代

4A TRIACS
T405-600B-TR STMICROELECTRONICS

功能相似

4A TRIACS
T435-600B-TR STMICROELECTRONICS

功能相似

4A TRIACS