5秒后页面跳转
T405-700W PDF预览

T405-700W

更新时间: 2024-10-31 22:20:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
8页 120K
描述
4A TRIACS

T405-700W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.72Is Samacsys:N
其他特性:SENSITIVE GATE外壳连接:ISOLATED
配置:SINGLE最大直流栅极触发电流:5 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:700 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

T405-700W 数据手册

 浏览型号T405-700W的Datasheet PDF文件第2页浏览型号T405-700W的Datasheet PDF文件第3页浏览型号T405-700W的Datasheet PDF文件第4页浏览型号T405-700W的Datasheet PDF文件第5页浏览型号T405-700W的Datasheet PDF文件第6页浏览型号T405-700W的Datasheet PDF文件第7页 
T4 Series  
®
SNUBBERLESS™ & LOGIC LEVEL  
4A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
4
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 to 800  
V
A2  
DRM RRM  
A2  
I
5 to 35  
mA  
GTT (Q )  
1
A1  
A2  
G
A1  
A2  
G
DPAK  
(T4-B)  
IPAK  
(T4-H)  
DESCRIPTION  
Based on ST’s Snubberless / Logic level technolo-  
gy providing high commutation performances, the  
T4 series is suitable for use on AC inductive loads.  
They are recommended for applications using  
universal motors, electrovalves.... such as kitchen  
aid equipments, power tools, dishwashers,...  
Available in a fully insulated package, the  
T4...-...W version complies with UL standards (ref.  
E81734).  
A2  
A1  
A2  
A1  
A2  
G
G
ISOWATT 220AB  
(T4-W)  
TO-220AB  
(T4-T)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (full sine wave)  
DPAK / IPAK  
TO-220AB  
A
T(RMS)  
Tc = 110°C  
4
ISOWATT 220AB  
F = 50 Hz  
Tc = 105°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
30  
31  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
5.1  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
June 2003 - Ed: 5  
1/8