Datasheet > T3036

T3036

更新时间： 2024-06-27 12:11:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	36K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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T3036 数据手册

SMD Type

Transistors

Low VCE(sat) Transistor

T3036

TO-252

Unit: mm

+0.15

-0.15

Features

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low saturation voltage.typicaliy V^CE(sat)=0.13V at I^C/I^B=4A/50mA.

High current capacity.Typically I^C=10A for DC

operaiton and 15A 10ms pulse.

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Base

+0.15

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse) *

Base current

I^CP

I^B

Collector power dissipation

Junction temperature

Storage temperature

P^C

150

T^stg

-55 to +150

* Single pulse Pw=100ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

V^CBO

V^CEO

V^EBO

I^CBO

I^EBO

h^FE

I^C=50ìA

I^C=1mA

I^E=50ìA

V^CB=20V

V^EB=5V

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Output capacitance

V^CE=2V, I^C=0.5A

120

390

V^CE(sat)IC = 4A , IB = 0.05A

V^BE(sat)I^C= 4A , I^B= 0.05A

0.13 0.25

0.9

1.2

C^ob

f^T

V^CB=10V, I^E=0A, f=1MHz

V^CE=5V, I^E= -1.5A, f=50MHz

220

150

Transition frequency

MHz

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