Datasheet > T2SD602A

T2SD602A

更新时间： 2024-11-08 17:01:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	384K
描述
50V,0.5A,General Purpose NPN Bipolar Transistor

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T2SD602A 数据手册

NPN Silicon Epitaxial Planar Transistor

T2SD602A

Features



Epitaxial planar die construction

Complimentary to T2SB710A

Low V_CE(sat)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-23

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-23

Ordering Information

Part Number

Package

SOT-23

Shipping Quantity

Marking Code

T2SD602A

3000 pcs / Tape & Reel

XQ/XR/XS

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Continuous Collector Current

Peak Collector Current

0.5

I_CM

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

200

Unit

C/W

°C

Thermal Resistance (Junction-to-Ambient) ^*1

Thermal Resistance (Junction-to-Case) ^*1

Thermal Resistance (Junction-to-Lead) ^*1

Operating junction Temperature

Storage Temperature Range

R_θJA

R_θJC

R_θJL

270

160

210

T_J

-55 ~ +150

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0714A: August 2023 [2.0]

www.gmesemi.com

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