Datasheet > T2SD1815

T2SD1815

更新时间： 2024-09-24 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	339K
描述
100V,3A,Medium Power NPN Bipolar Transistor

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数据手册

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T2SD1815 数据手册

NPN Silicon Epitaxial Planar Transistor

T2SD1815I T2SD1815

Features



Adoption of FBET, MBIT processes

Large current capacity and wide ASO

Low collector-to-emitter saturation voltage

Excllent linearity of h_FE

High f_T

Fast switching time

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-251, TO-252

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-251

TO-252

Ordering Information

Part Number

T2SD1815I

T2SD1815

Package

Shipping Quantity

Marking Code

D1815I

TO-251

TO-252

80 pcs / Tube

80 pcs / Tube or 2500 pcs / Tape & Reel

D1815

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

120

100

I_CM

Thermal Characteristics

Parameter

Power Dissipation ( T_A= 25°C )

Thermal Resistance (Junction-to-Ambient)

Junction Temperature

Symbol

P_D

Value

Unit

C/W

°C

R_θJA

T_J

125

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0600A: November 2023 [1.0]

www.gmesemi.com

12 3 4 5

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