Datasheet > T2SD1767

T2SD1767

更新时间： 2024-09-22 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	322K
描述
80V,0.7A,General Purpose NPN Bipolar Transistor

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T2SD1767 数据手册

Product Specification

Medium Power Transistor

T2SD1767

FEATURES



High breakdown voltage and high current

Complementary pair with T2SB1189

Halogen free

Qualified to AEC-Q101 standards for high reliability

SOT-89

ORDERING INFORMATION

Type No.

Marking

Package Code

T2SD1767

DCP/DCQ/DCR

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

0.7

Collector Current -Continuous

Collector Dissipation

P_C

500

℃

Junction and Storage Temperature

T_J,T_STG

-55 to +150

STM0469A: December 2017 [P]

www.gmesemi.com

12 3 4

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