Datasheet > T2SD1760

T2SD1760

更新时间： 2024-09-22 17:01:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	363K
描述
50V,3A,General Purpose NPN Bipolar Transistor

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T2SD1760 数据手册

Product Specification

Power Transistor

T2SD1760

FEATURES



Low V_CE(sat)

V_CE(sat)=0.5V(Typ.)

(I_C/I_B=2A/0.2A)



Complements the T2SB1184

Halogen free

Qualified to AEC-Q101 standards for high reliability

APPLICATIONS



Epitaxial planar type



NPN silicon transistor

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

T2SD1760

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

D1760

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

I_CP

4.5

Base Current

I_B

Collector Power Dissipation

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Lead

Junction and Storage temperature range

P_C

1.5

R_θJA

R_θJC

R_θJL

°C/W

29.3

2.3

T_j,T_stg

-55 to +150

℃

STM0796A: August 2022 [1.0]

www.gmesemi.com

12 3 4

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