Datasheet > T2960BB45E

T2960BB45E

更新时间： 2024-11-06 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管
页数	文件大小	规格书
7页	710K
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T2960BB45E 数据手册

Date:- 11 Jan, 2020

Data Sheet Issue:- 2

Insulated Gate Bi-Polar Transistor

Type T2960BB45E

Absolute Maximum Ratings

MAXIMUM

LIMITS

4500

VOLTAGE RATINGS

UNITS

V_CES

Collector – emitter voltage

V_{DC link}

V_GES

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

2800

±20

MAXIMUM

LIMITS

3000

RATINGS

UNITS

I_C

Continuous DC collector current, IGBT

Repetitive peak collector current, t_p=1ms, IGBT

Maximum reverse emitter current, t_p=100µs, (note 2 & 3)

Maximum power dissipation, IGBT (note 2)

Operating temperature range

I_CRM

I_ECO

P_MAX

T_{j op}

T_stg

6000

3000

23.8

°C

-40 to +125

Storage temperature range

Notes: -

1) Unless otherwise indicated T_j= 125ºC.

2) T_sink= 25°C, double side cooled.

3) Maximum commutation loop inductance 200nH.

4) Half-sinewave, 125°C T_jinitial.

Data Sheet T2960BB45E Issue 2

Page 1 of 7

January, 2020

12 3 4 5 6 7

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